Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH20N120BD1

IGBT 1200V 40A 190W TO247

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IXYS IXGH20N120B

IGBT 1200V 40A 190W TO247

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IXYS IXGH16N60C2D1

IGBT 600V 40A 150W TO247

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IXYS IXGH16N60B2D1

IGBT 600V 40A 150W TO247

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IXYS IXGH16N170AH1

IGBT 1700V 16A 190W TO247

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IXYS IXGC16N60C2D1

IGBT 600V 20A 63W ISOPLUS220

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IXYS IXGA7N60C

IGBT 600V 14A 54W TO263

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IXYS IXGA7N60BD1

IGBT 600V 14A 80W TO263

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