Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
ON Semiconductor FGA90N30TU
IGBT 300V 90A 219W TO3P
0
ON Semiconductor FGA90N30DTU
IGBT 300V 90A 219W TO3P
0
ON Semiconductor FGA180N30DTU
IGBT 300V 180A 480W TO3P
0
ON Semiconductor FGA15N120ANTDTU
IGBT 1200V 30A 186W TO3P
0
ON Semiconductor FGA120N30DTU
IGBT 300V 120A 290W TO3P
0
STMicroelectronics STGD6NC60HT4
IGBT 600V 15A 56W DPAK
0
STMicroelectronics STGP10NC60K
IGBT 600V 20A 60W TO220
0
ON Semiconductor HGTG20N60C3D
IGBT 600V 45A 164W TO247
0