Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
ON Semiconductor SGS6N60UFDTU
IGBT 600V 6A 22W TO220F
0
ON Semiconductor SGR15N40LTM
IGBT 400V 45W DPAK
0
ON Semiconductor SGP13N60UFTU
IGBT 600V 13A 60W TO220
0
ON Semiconductor SGR2N60UFDTM
IGBT 600V 2.4A 25W DPAK
0
ON Semiconductor SGS6N60UFTU
IGBT 600V 6A 22W TO220F
0
ON Semiconductor SGR6N60UFTF
IGBT 600V 6A 30W DPAK
0
ON Semiconductor SGR2N60UFDTF
IGBT 600V 2.4A 25W DPAK
0
ON Semiconductor SGR6N60UFTM
IGBT 600V 6A 30W DPAK
0