Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4PC60U-PPBF

IGBT 600V 75A 520W TO247AC

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Infineon Technologies IRGP20B120UD-EP

IGBT 1200V 40A 300W TO247AD

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Infineon Technologies IRGP20B120U-EP

IGBT 1200V 40A 300W TO247AD

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Infineon Technologies IRG4PH40UD-EPBF

IGBT 1200V 41A 160W TO247-3

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Infineon Technologies IRGB5B120KDPBF

IGBT 1200V 12A 89W TO220AB

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Infineon Technologies IRGSL14C40LPBF

IGBT 430V 20A 125W TO262AA

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Infineon Technologies IRGS10B60KDPBF

IGBT 600V 22A 156W D2PAK

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Infineon Technologies IRG4BC20MDPBF

IGBT 600V 18A 60W TO220AB

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