Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGSL4B60KD1PBF

IGBT 600V 11A 63W TO262

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STMicroelectronics STGB12NB60KDT4

IGBT 600V 30A 125W D2PAK

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STMicroelectronics STGB7NB60HDT4

IGBT 600V 14A 80W D2PAK

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STMicroelectronics STGP7NB60KD

IGBT 600V 14A 80W TO220

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Infineon Technologies IRGP4050

IGBT 250V 104A 330W TO247AC

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ON Semiconductor NGP15N41CL

IGBT 440V 15A 107W TO220AB

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ON Semiconductor NGD18N40CLBT4

IGBT 430V 15A 115W DPAK

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ON Semiconductor NGB18N40CLBT4

IGBT 430V 18A 115W D2PAK

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