Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4RC10UTRR

IGBT 600V 8.5A 38W DPAK

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Infineon Technologies IRG4RC10UTR

IGBT 600V 8.5A 38W DPAK

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Infineon Technologies IRG4RC10UTRL

IGBT 600V 8.5A 38W DPAK

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Infineon Technologies IRG4RC10UD

IGBT 600V 8.5A 38W DPAK

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Infineon Technologies IRG4RC10STR

IGBT 600V 14A 38W DPAK

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Infineon Technologies IRG4RC10STRL

IGBT 600V 14A 38W DPAK

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Infineon Technologies IRG4RC10SD

IGBT 600V 14A 38W DPAK

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Infineon Technologies IRG4RC10KTRR

IGBT 600V 9A 38W DPAK

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