Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4BC30KD-STRR

IGBT 600V 28A 100W D2PAK

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Infineon Technologies IRG4BC30F-S

IGBT 600V 31A 100W D2PAK

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Infineon Technologies IRG4BC30FD-S

IGBT 600V 31A 100W D2PAK

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Infineon Technologies IRG4BC20W-S

IGBT 600V 13A 60W D2PAK

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Infineon Technologies IRG4BC20U-S

IGBT 600V 16A 60W TO220-3

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Infineon Technologies IRG4BC20FD-STRR

IGBT 600V 16A 60W D2PAK

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Infineon Technologies IRG4BC20FD-STRL

IGBT 600V 16A 60W D2PAK

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Infineon Technologies IRG4PH30K

IGBT 1200V 20A 100W TO247AC

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