Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGPC50U

IGBT UFAST 600V 55A TO-247AC

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Infineon Technologies IRGPF40F

IGBT FAST 900V 31A TO-247AC

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Infineon Technologies IRGPH40F

IGBT FAST 1200V 29A TO-247AC

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Infineon Technologies IRGPH50F

IGBT FAST 1200V 45A TO-247AC

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Infineon Technologies IRGBC30FD2

IGBT W/DIODE 600V 31A TO-220AB

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Infineon Technologies IRGBC20UD2

IGBT W/DIODE 600V 13A TO-220AB

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Infineon Technologies IRGPC30FD2

IGBT W/DIODE 600V 31A TO-247AC

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Infineon Technologies IRGPC40FD2

IGBT W/DIODE 600V 49A TO-247AC

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