Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


IXYS IXBX64N250

IGBT 2500V

108.56

IXYS IXBK64N250

BIMOSFET 2500V 75A MONO TO-247AD

108.41

IXYS IXGL75N250

IGBT 2500V 110A 430W I5-PAK

88.44

IXYS IXYF30N450

IGBT 450V

85.14

IXYS IXGX75N250

IGBT 2500V 170A 780W PLUS247

75.38

IXYS IXYL40N250CV1

IGBT 2.5KV 70A ISOPLUSI5-PAK

60.68

IXYS IXBF15N300C

IGBT 3000V 37A 300W ISOPLUSI4

53.08

IXYS IXGN200N170

IGBT

52.44