Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXBF10N300C

IGBT 3000V 29A 240W ISOPLUSI4

46.7

IXYS IXGH48N60C3C1

IGBT 600V 75A 300W TO247

45.81

IXYS IXBF20N300

IGBT 3000V 34A 150W ISOPLUSI4

41.66

IXYS IXBT32N300HV

IGBT 3000V 80A 400W TO268

39.65

IXYS IXGF25N300

IGBT 3000V 27A 114W I4-PAK

39.48

IXYS IXBT42N300HV

IGBT 3000V 42A 357W TO268

37.97

IXYS MMIX1G320N60B3

MOSFET N-CH

37.51

IXYS MMIX1Y100N120C3H1

IGBT 1200V 92A 400W SMPD

36.91