Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXBR42N170

IGBT 1700V 57A 200W ISOPLUS247

28.56

IXYS IXXN200N65A4

IGBT

27.39

IXYS IXGR60N60C3C1

IGBT 600V 75A 170W ISOPLUS247

26.4

Infineon Technologies SIGC158T120R3LEX1SA2

IGBT 1200V 150A DIE

24.92

IXYS IXGX120N120A3

IGBT 1200V 240A 830W PLUS247

24.26

IXYS IXGT4N250C

IGBT 2500V 13A 150W TO268

23.74

Microsemi Corporation APT150GN60LDQ4G

IGBT 600V 220A 536W TO-264L

23.25

IXYS IXGL200N60B3

IGBT 600V 150A 400W ISOPLUS264

22.28