Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYH16N250CV1HV

IGBT 2500V 35A TO247HV

20.12

IXYS IXGT20N120

IGBT 1200V 40A 150W TO268

19.99

Microsemi Corporation APT50GT120B2RDLG

IGBT 1200V 106A 694W TO-247

19.91

IXYS IXYX100N120C3

IGBT 1200V 188A 1150W PLUS247

19.78

IXYS IXYX100N120B3

IGBT 1200V 188A 1150W PLUS247

19.78

IXYS IXGB200N60B3

IGBT 600V 75A 1250W PLUS264

19.77

IXYS IXBT24N170

IGBT 1700V 60A 250W TO268

19.76

Microsemi Corporation APT50GF120B2RG

IGBT 1200V 135A 781W TMAX

18.98