Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXBT42N170A

IGBT 1700V 42A 357W TO268

18.96

Microsemi Corporation APT65GP60L2DQ2G

IGBT 600V 198A 833W TO264

18.9

IXYS IXBH42N170A

IGBT 1700V 42A 357W TO247

18.83

Infineon Technologies SIGC109T120R3LEX1SA2

IGBT 1200V 100A DIE

18.78

IXYS IXXK200N60C3

IGBT 600V 340A 1630W TO264

18.32

IXYS IXXK200N60B3

IGBT 600V 380A 1630W TO264

18.32

Microsemi Corporation APT35GP120B2DQ2G

IGBT 1200V 96A 543W TMAX

18.25

IXYS IXGK82N120B3

IGBT 1200V 230A 1250W TO264

18.17