Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGK82N120A3

IGBT 1200V 260A 1250W TO264

18.17

IXYS IXYX50N170C

IGBT 1700V 178A PLUS247

18.03

IXYS IXYH12N250CV1HV

IGBT 2500V 28A TO247HV

18.01

Microsemi Corporation APT150GN60B2G

IGBT 600V 220A 536W SOT227

17.91

IXYS IXYR100N120C3

IGBT 1200V 104A 484W ISOPLUS247

17.9

IXYS IXXK100N60C3H1

IGBT 600V 170A 695W TO264

17.87

IXYS IXXK100N60B3H1

IGBT 600V 200A 695W TO264

17.87

IXYS IXGT32N170A

IGBT 1700V 32A 350W TO268

17.6