Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGK35N120CD1

IGBT 1200V 70A 350W PLUS247

16.18

IXYS IXGK320N60B3

IGBT 600V 500A 1700W TO264

16.08

Microsemi Corporation APT50GT120B2RDQ2G

IGBT 1200V 94A 625W TO247

15.91

IXYS IXGK400N30A3

IGBT 300V 400A 1000W TO264AA

15.79

IXYS IXGK320N60A3

IGBT 600V 320A 1000W TO264AA

15.79

IXYS IXGH90N60B3

IGBT 600V 75A 660W TO247

15.64

IXYS IXGX400N30A3

IGBT 300V 400A 1000W PLUS247

15.64

IXYS IXGX320N60A3

IGBT 600V 320A 1000W PLUS247

15.64