Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXXX100N60B3H1

IGBT 600V 200A 695W TO247

14.43

Microsemi Corporation APT50GP60B2DQ2G

IGBT 600V 150A 625W TMAX

14.33

IXYS IXGR55N120A3H1

IGBT 1200V 70A 200W ISOPLUS247

14.18

IXYS IXGA30N60C3C1

IGBT 600V 60A 220W TO263

13.77

IXYS IXYH12N250C

IGBT 2500V 28A TO247AD

13.73

Microsemi Corporation APT80GA90LD40

IGBT 900V 145A 625W TO-264

13.69

IXYS IXGP30N60C3C1

IGBT 600V 60A 220W TO220

13.68

Microsemi Corporation APT102GA60L

IGBT 600V 183A 780W TO264

13.67