Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGK50N120C3H1

IGBT 1200V 95A 460W TO264

15.54

IXYS IXGT40N120B2D1

IGBT 1200V 75A 380W TO268

14.67

IXYS IXYX100N65B3D1

IGBT 650V 188A 1150W PLUS247

14.61

Microsemi Corporation APT75GN120B2G

IGBT 1200V 200A 833W TMAX

14.6

IXYS IXGX35N120BD1

IGBT 1200V 70A 350W PLUS247

14.57

IXYS IXGR35N120B

IGBT 1200V 70A 200W ISOPLUS247

14.51

IXYS IXGK35N120BD1

IGBT 1200V 70A 350W TO264AA

14.47

IXYS IXA30RG1200DHG-TUB

IGBT PHASELEG 1200V 30A SMPD

14.47