Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGT35N120B

IGBT 1200V 70A 300W TO268

13.07

Microsemi Corporation APT40GP60B2DQ2G

IGBT 600V 100A 543W TMAX

13.04

IXYS FID35-06C

IGBT 600V 38A 125W I4PAC5

12.96

Infineon Technologies IKQ75N120CT2XKSA1

IGBT 1200V 150A TO247-3-46

12.9

IXYS IXGH24N170A

IGBT 1700V 24A 250W TO247AD

12.78

IXYS IXA30RG1200DHG-TRR

IGBT PHASELEG 1200V 43A SMPD

12.78

Microsemi Corporation APT50GP60BG

IGBT 600V 100A 625W TO247

12.76

IXYS IXGX50N120C3H1

IGBT 1200V 95A 460W PLUS247

12.72