Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IKD04N60RFATMA1

IGBT TRENCH 600V 8A TO252-3

0

Infineon Technologies SGD02N60BUMA1

IGBT 600V 6A 30W TO252-3

0.55

IXYS IXA4I1200UC-TRL

IGBT 1200V 9A 45W TO252AA

0.47

Alpha & Omega Semiconductor Inc. AOD7B65M3

IGBT 650V 7A TO252

0.37

Alpha & Omega Semiconductor Inc. AOD5B65N1

IGBT 650V 5A TO252

0.34

Infineon Technologies AUIRGPS4070D0

IGBT 700V SUPER PG-TO274-3-903

14.67

ROHM Semiconductor RGS80TSX2DHRC11

1200V 40A FIELD STOP TRENCH IGBT

11.35

STMicroelectronics STGYA120M65DF2AG

IGBT

11.03