Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies AIHD04N60RFATMA1

IC DISCRETE 600V TO252-3

0.64

Infineon Technologies IGU04N60TAKMA1

IGBT TRENCH 600V 8A TO251-3

0.62

Infineon Technologies IGD01N120H2BUMA1

IGBT 1200V 3.2A 28W TO252-3

0.62

Infineon Technologies AIHD04N60RATMA1

IC DISCRETE 600V TO252-3

0.62

IXYS IXA4IF1200UC-TRL

IGBT 1200V 9A 45W TO252AA

0.6

Infineon Technologies IKD03N60RFAATMA1

IGBT 600V 5A 53.6W TO252-3

0.6

STMicroelectronics STGB6M65DF2

IGBT TRENCH 650V 12A D2PAK

0.59

Infineon Technologies AIHD03N60RFATMA1

IC DISCRETE 600V TO252-3

0.57