Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies AIHD06N60RATMA1

IC DISCRETE 600V TO252-3

0.7

Alpha & Omega Semiconductor Inc. AOTF10B60D2

IGBT 600V 10A TO-220F

0.66

STMicroelectronics STGD3NC120H-1

IGBT 1200V 16A IPAK

0.66

Littelfuse Inc. NGD8201BNT4G

IGBT 400V 20A 125W DPAK-3

0.66

Littelfuse Inc. NGD8209NT4G

IGBT 410V 12A 125W DPAK-3

0.66

Alpha & Omega Semiconductor Inc. AOB5B60D

IGBT 600V 10A 82.4W TO263

0.66

Alpha & Omega Semiconductor Inc. AOTF5B60D

IGBT 600V 10A 31.2W TO220F

0.66

Infineon Technologies IKD04N60RAATMA1

IGBT TRENCH 600V 8A TO252-3

0.65