Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor FGY75T95LQDT

IGBT 950V 75A

10.45

STMicroelectronics STGW40H120F2

IGBT 1200V 40A HS TO-247

10.25

ON Semiconductor FGY75T95SQDT

IGBT 950V 75A

10

STMicroelectronics STGWA25M120DF3

IGBT 1200V 50A 375W TO247

10

ROHM Semiconductor RGS80TSX2HRC11

1200V 40A FIELD STOP TRENCH IGBT

9.13

ROHM Semiconductor RGS50TSX2DHRC11

1200V 25A FIELD STOP TRENCH IGBT

8.59

ON Semiconductor FGH75T65SHDTL4

IGBT 650V 150A 455W TO-247

8.45

STMicroelectronics STGW25H120F2

IGBT H-SERIES 1200V 25A TO-247

8.25