Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies SGW15N120FKSA1

IGBT 1200V 30A 198W TO247-3

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Infineon Technologies SGW10N60AFKSA1

IGBT 600V 20A 92W TO247-3

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Infineon Technologies SGP30N60HSXKSA1

IGBT 600V 41A 250W TO220-3

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Infineon Technologies SGP20N60XKSA1

IGBT 600V 40A 179W TO220-3

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Infineon Technologies SGP15N60XKSA1

IGBT 600V 31A 139W TO220-3

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Infineon Technologies SGP10N60AXKSA1

IGBT 600V 20A 92W TO220-3

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Infineon Technologies SGP06N60XKSA1

IGBT 600V 12A 68W TO220-3

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Infineon Technologies SGP04N60XKSA1

IGBT 600V 9.4A 50W TO220-3

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