Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies SGP02N60XKSA1

IGBT 600V 6A 30W TO220-3

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Infineon Technologies SGI02N120XKSA1

IGBT 1200V 6.2A 62W TO262-3

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Infineon Technologies SGD06N60BUMA1

IGBT 600V 12A 68W TO252-3

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Infineon Technologies SGD04N60BUMA1

IGBT 600V 9.4A 50W TO252-3

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Infineon Technologies SGB10N60AATMA1

IGBT 600V 20A 92W TO263-3

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Infineon Technologies SGB06N60ATMA1

IGBT 600V 12A 68W TO263-3

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Infineon Technologies SGB02N60ATMA1

IGBT 600V 6A 30W TO263-3

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Infineon Technologies IKW03N120H2FKSA1

IGBT 1200V 9.6A 62.5W TO247-3

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