Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies SKW07N120FKSA1

IGBT 1200V 16.5A 125W TO247

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Infineon Technologies SKP15N60XKSA1

IGBT 600V 31A 139W TO220-3

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Infineon Technologies SKP10N60AXKSA1

IGBT 600V 20A 92W TO220-3

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Infineon Technologies SKP06N60XKSA1

IGBT 600V 12A 68W TO220-3

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Infineon Technologies SKP04N60XKSA1

IGBT 600V 9.4A 50W TO220-3

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Infineon Technologies SKP02N60XKSA1

IGBT 600V 6A 30W TO220-3

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Infineon Technologies SKB15N60HSATMA1

IGBT 600V 27A 138W TO263-3

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Infineon Technologies SKB04N60ATMA1

IGBT 600V 9.4A 50W TO263-3

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