Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

ON Semiconductor FGPF4565

IGBT 650V 30W TO-220F

1.13

ON Semiconductor FGB5N60UNDF

IGBT 600V 10A 73.5W D2PAK

1.12

Infineon Technologies IGB15N60TATMA1

IGBT 600V 30A 130W TO263-3-2

1.08

ON Semiconductor NGTD14T65F2SWK

IGBT TRENCH FIELD STOP 650V DIE

1.08

ON Semiconductor NGTD14T65F2WP

IGBT TRENCH FIELD STOP 650V DIE

1.06

ON Semiconductor NGTD13T65F2SWK

IGBT TRENCH FIELD STOP 650V DIE

1.05

Infineon Technologies IKA06N60TXKSA1

IGBT 600V 10A 28W TO220-3

1.03

Alpha & Omega Semiconductor Inc. AOTF15B65M1

IGBT 650V 15A TO220

1.01