Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor SGS23N60UFDTU

IGBT 600V 23A 73W TO220F

1.17

ON Semiconductor ISL9V2040S3ST

IGBT 430V 10A 130W TO263AB

0

Infineon Technologies AIHD15N60RFATMA1

IC DISCRETE 600V TO252-3

1.16

Infineon Technologies IKP06N60TXKSA1

IGBT 600V 12A 88W TO220-3

1.15

Infineon Technologies IRG4BC10KDPBF

IGBT 600V 9A 38W TO220AB

1.15

ON Semiconductor SGP13N60UFDTU

IGBT 600V 13A 60W TO220

1.15

Alpha & Omega Semiconductor Inc. AOTF15B60D

IGBT 600V 30A 50W TO220F

1.14

Infineon Technologies IKP04N60TXKSA1

IGBT 600V 8A 42W TO220-3

1.13