Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IKD10N60RAATMA2

IGBT 600V 20A 150W TO252-3

0.94

Infineon Technologies IRGR2B60KDTRRPBF

IGBT 600V 6.3A 35W DPAK

0.93

ON Semiconductor FGD3050G2

IGBT 500V 27A DPAK-3

0.92

Littelfuse Inc. NGB8202ANTF4G

IGBT 440V 20A 150W D2PAK

0.92

Infineon Technologies AIHD10N60RFATMA1

IC DISCRETE 600V TO252-3

0.92

Microchip Technology GN2470K4-G

IC IGBT 700V 3.5A 3DPAK

0.91

Infineon Technologies AIHD10N60RATMA1

IC DISCRETE 600V TO252-3

0.89

ON Semiconductor FGD3245G2-F085V

IGBT 450V DPAK

0.88