Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation MS2322

RF TRANS NPN 65V 1.15GHZ M115

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Microsemi Corporation MS2321

RF TRANS NPN 65V 1.15GHZ M105

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Microsemi Corporation MS2272

RF TRANS NPN 65V 1.215GHZ M216

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Microsemi Corporation MS2267

RF TRANS NPN 60V 1.215GHZ M214

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Microsemi Corporation MS2215

RF TRANS NPN 55V 1.215GHZ M216

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Microsemi Corporation MS2214

RF TRANS NPN 55V 1.215GHZ M218

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Microsemi Corporation MS2213

RF TRANS NPN 55V 1.215GHZ M214

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Microsemi Corporation MS2212

RF TRANS NPN 55V 1.215GHZ M222

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