Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation TPR400

RF TRANS NPN 55V 1.09GHZ 55CX

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Microsemi Corporation MS1007

RF TRANS NPN 55V 30MHZ M174

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Microsemi Corporation 1090MP

RF TRANS NPN 65V 1.15GHZ 55FW-1

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Microsemi Corporation MS2393

RF TRANS NPN 65V 1.15GHZ M138

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Microsemi Corporation MS2361

RF TRANS NPN 65V 1.15GHZ M115

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Microsemi Corporation MS2341

RF TRANS NPN 65V 1.15GHZ M115

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Microsemi Corporation 0204-125

RF TRANS NPN 60V 400MHZ 55JT

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Microsemi Corporation 0105-50

RF TRANS NPN 65V 500MHZ 55JT

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