Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation SD1536-08

RF TRANS NPN 65V 1.15GHZ M105

0

Microsemi Corporation TPR175

RF TRANS NPN 55V 1.09GHZ 55CX

0

Microsemi Corporation MS1202

RF TRANS NPN 35V 136MHZ M135

0

Microsemi Corporation 10A030

RF TRANS NPN 24V 2.5GHZ 55FT

0

Microsemi Corporation MRF586G

RF TRANS NPN 17V 3GHZ TO39

0

Microsemi Corporation MS2228

RF TRANS NPN 65V 1.09GHZ M214

0

Microsemi Corporation TCS1200

RF TRANS NPN 65V 1.03GHZ 55TU-1

0

Microsemi Corporation MS1582

RF TRANS NPN 30V 860MHZ M173

0