Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation 46007T
RF POWER TRANSISTOR
0
Microsemi Corporation 44086H
RF POWER TRANSISTOR
0
Microsemi Corporation 44022H
RF POWER TRANSISTOR
0
Microsemi Corporation 42108HS
RF POWER TRANSISTOR
0
Microsemi Corporation 42107HS
RF POWER TRANSISTOR
0
Microsemi Corporation 42106HS
RF POWER TRANSISTOR
0
Microsemi Corporation 40036ST
RF POWER TRANSISTOR
0
Microsemi Corporation 40036S
RF POWER TRANSISTOR
0