Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation 75060B
RF POWER TRANSISTOR
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Microsemi Corporation 74060H
RF POWER TRANSISTOR
0
Microsemi Corporation 70062A
RF POWER TRANSISTOR
0
Microsemi Corporation 70061A
RF POWER TRANSISTOR
0
Microsemi Corporation 70060A
RF POWER TRANSISTOR
0
Microsemi Corporation 68231H
RF POWER TRANSISTOR
0
Microsemi Corporation 68201A
RF POWER TRANSISTOR
0
Microsemi Corporation 68106H
RF POWER TRANSISTOR
0