Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation 80277H
RF POWER TRANSISTOR
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Microsemi Corporation 80275H
RF POWER TRANSISTOR
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Microsemi Corporation 76020H
RF POWER TRANSISTOR
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Microsemi Corporation 76016S
RF POWER TRANSISTOR
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Microsemi Corporation 75109A
RF POWER TRANSISTOR
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Microsemi Corporation 75101H
RF POWER TRANSISTOR
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Microsemi Corporation 75096A
RF POWER TRANSISTOR
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Microsemi Corporation 75086H
RF POWER TRANSISTOR
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