Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation MS1030DE
RF POWER TRANSISTOR
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Microsemi Corporation MS1030
RF POWER TRANSISTOR
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Microsemi Corporation MS1019
RF POWER TRANSISTOR
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Microsemi Corporation MS1015D
RF POWER TRANSISTOR
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Microsemi Corporation MS1014
RF POWER TRANSISTOR
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Microsemi Corporation MS1006
RF TRANS NPN 55V 30MHZ M135
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Microsemi Corporation MS1001A
TRANS RF BIPO 270W 20A
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Microsemi Corporation MRFC545
RF POWER TRANSISTOR
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