Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation 2731-200P
RF TRANS 3.1GHZ MODULE
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Microsemi Corporation 2324-20
RF TRANS 40V 2.4GHZ 55AW
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Microsemi Corporation 2224-6P
RF POWER TRANSISTOR
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Microsemi Corporation 2224-12LP
RF POWER TRANSISTOR
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Microsemi Corporation 2223-1.7
RF POWER TRANSISTOR
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Microsemi Corporation 1004MA
RF POWER TRANSISTOR
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Microsemi Corporation 1000MA
RF POWER TRANSISTOR
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Microsemi Corporation 82094
RF POWER TRANSISTOR
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