Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

STMicroelectronics STGWA60V60DF

IGBT BIPO 600V 60A TO247-3

3.49

IXYS IXGP28N60A3

IGBT

3.48

IXYS IXYA8N90C3D1

IGBT 900V 20A 125W C3 TO-263AA

3.47

Infineon Technologies IGW40N60H3FKSA1

IGBT 600V 80A 306W TO247-3

3.45

Alpha & Omega Semiconductor Inc. AOK75B65H1

IGBT 650V 75A TO-247

3.45

ON Semiconductor NGTB50N65FL2WG

IGBT 600V 50A TO247

3.38

Infineon Technologies SGP15N120XKSA1

IGBT 1200V 30A 198W TO220-3

3.33

Renesas Electronics America RJP6085DPN-00#T2

IGBT 600V 40A 178.5W TO-220AB

3.5