Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT20GN60BDQ1G

IGBT 600V 40A 136W TO247

3.67

IXYS IXGA36N60A3

IGBT

3.66

ROHM Semiconductor RGTH80TS65DGC11

IGBT 650V 70A 234W TO-247N

3.66

IXYS IXA20IF1200HB

IGBT 1200V 38A 165W TO247

3.61

IXYS IXGH12N120A3

IGBT 1200V 22A 100W TO247

3.61

IXYS IXBH5N160G

IGBT 1600V 5.7A 68W TO247AD

3.61

IXYS IXGA12N120A3

IGBT 1200V 22A 100W TO263

3.61

IXYS IXDP20N60B

IGBT 600V 32A 140W TO220AB

3.61