Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFP196E6327HTSA1

RF TRANS NPN 12V 7.5GHZ SOT143-4

0

Diodes Incorporated MMBTH10-7-F

RF TRANS NPN 25V 650MHZ SOT23-3

0

Diodes Incorporated MMBTH24-7-F

RF TRANS NPN 40V 400MHZ SOT23-3

0

M/A-Com Technology Solutions MAPR-000912-500S00

RF TRANS NPN 80V

652.79

M/A-Com Technology Solutions MRF448

RF TRANS NPN 50V 211-11

139.26

Renesas Electronics America Inc. HFA3127BZ

RF TRANS 5 NPN 12V 8GHZ 16SOIC

10.12

Renesas Electronics America Inc. HFA3096BZ

RF TRANS 12/15V 5.5GHZ 16SOIC

8.55

NXP USA Inc. BFU520YX

RF TRANS 2 NPN 12V 10GHZ SOT363

0