Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.


NXP USA Inc. BFU590GX

RF TRANS NPN 12V 8.5GHZ SOT223

0

NXP USA Inc. BFU690F,115

RF TRANS NPN 5.5V 18GHZ 4DFP

0

Infineon Technologies BFP540FESDH6327XTSA1

RF TRANS NPN 5V 30GHZ 4TSFP

0

Infineon Technologies BFP650FH6327XTSA1

RF TRANS NPN 4.5V 42GHZ 4TSFP

0

Infineon Technologies BFP760H6327XTSA1

RF TRANS NPN 4V 45GHZ SOT343

0

NXP USA Inc. BFU530AR

RF TRANS NPN 12V 11GHZ TO236AB

0

Infineon Technologies BFP843H6327XTSA1

RF TRANS NPN 2.25V SOT343

0

NXP USA Inc. BFU520WX

RF TRANS NPN 12V 10GHZ SOT323-3

0