Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IGP01N120H2XKSA1

IGBT 1200V 3.2A 28W TO220-3

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ON Semiconductor FGA20S120M

IGBT 1200V 40A 348W TO3PN

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Infineon Technologies IKD10N60R

IGBT 600V 20A 150W TO252-3

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Infineon Technologies IKD06N60R

IGBT 600V 12A 100W TO252-3

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Infineon Technologies IKD04N60R

IGBT 600V 8A 75W TO252-3

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STMicroelectronics STGW45HF60WDI

IGBT 600V 70A 250W TO247

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STMicroelectronics STGD7NB120S-1

IGBT 1200V 10A 55W IPAK

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STMicroelectronics STGW38IH130D

IGBT 1300V 63A 250W TO247

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