Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGWA60H65DFB

IGBT BIPO 650V 60A TO247-3

5.57

IXYS IXGH48N60C3

IGBT 600V 75A 300W TO247AD

5.43

Renesas Electronics America RJP60F4DPM-00#T1

IGBT 600V 60A 41.2W TO-3PFM

6.06

Infineon Technologies IKB06N60TATMA1

IGBT 600V 12A 88W TO263-3

2.11

IXYS IXYB82N120C3H1

IGBT 1200V 164A 1040W PLUS264

21.62

STMicroelectronics STGW60H65DFB

IGBT 650V 80A 375W TO-247

5.26

Infineon Technologies IKW40N65H5FKSA1

IGBT 650V 74A 255W PG-TO247-3

4.73

ON Semiconductor HGTG5N120BND

IGBT 1200V 21A 167W TO247

2.81