Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGW20IH125DF

IGBT 1250V 40A 259W TO-247

3.92

STMicroelectronics STGWT30V60DF

IGBT 600V 60A 258W TO3P-3

3.73

Renesas Electronics America RJP60V0DPM-00#T1

IGBT 600V 45A 40W TO-3PFM

3.82

ROHM Semiconductor RGT50TS65DGC11

IGBT 650V 48A 174W TO-247N

3.5

STMicroelectronics STGW30H65FB

IGBT 650V 30A 260W TO-247

3.42

ROHM Semiconductor RGT60TS65DGC11

IGBT 650V 55A 194W TO-247N

3.31

STMicroelectronics STGF20H60DF

IGBT 600V 40A 37W TO220FP

3.21

STMicroelectronics STGFW20V60F

IGBT 600V 40A 52W TO3PF

3.2