Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor NGB8204NT4

IGBT 430V 18A 115W D2PAK

0

ON Semiconductor NGB8202NT4

IGBT 440V 20A 150W D2PAK

0

ON Semiconductor MGB15N40CLT4

IGBT 440V 15A 150W D2PAK

0

Microsemi Corporation APT40GP60BG

IGBT 600V 100A 543W TO247

0

Microsemi Corporation APT33GF120LRDQ2G

IGBT 1200V 64A 357W TO264

0

Microsemi Corporation APT30GT60KRG

IGBT 600V 64A 250W TO220

0

IXYS IXGC16N60B2D1

IGBT 600V 28A 63W ISOPLUS220

0

IXYS IXGC16N60B2

IGBT 600V 28A 63W ISOPLUS220

0