Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Infineon Technologies SKB02N120ATMA1
IGBT 1200V 6.2A 62W TO263-3-2
1.43
ON Semiconductor SGF23N60UFTU
IGBT 600V 23A 75W TO3PF
1.43
ON Semiconductor FGB3236-F085
IGBT 360V 44A 187W D2PAK
0
ON Semiconductor NGTD17T65F2WP
IGBT TRENCH FIELD STOP 650V DIE
1.38
ON Semiconductor NGTD21T65F2SWK
IGBT TRENCH FIELD STOP 650V DIE
1.38
ON Semiconductor FGB3040G2-F085C
ECOSPARK2 IGN-IGBT TO263
1.37
Infineon Technologies IKB15N60TATMA1
IGBT 600V 30A 130W TO263-3
1.37
ON Semiconductor FGB7N60UNDF
IGBT 600V 14A 83W D2PAK
1.35