IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.


Infineon Technologies FF600R12ME4BOSA1

IGBT MODULE VCES 600V 600A

226.92

Infineon Technologies FZ900R12KE4HOSA1

IGBT MODULE 1200V 900A

155.17

Infineon Technologies FF450R12KT4HOSA1

IGBT MODULE 1200V 450A

155.17

Infineon Technologies FF300R12KT4HOSA1

IGBT MODULE 1200V 300A

122.44

Infineon Technologies FF400R06KE3HOSA1

IGBT MODULE 600V 400A

120.75

Infineon Technologies FZ400R12KE4HOSA1

IGBT MODULE 1200V 400A

100.81

Vishay / Semiconductor - Diodes Division VS-GA250SA60S

IGBT 600V 400A SOT227

78.75

Vishay / Semiconductor - Diodes Division VS-GT180DA120U

IGBT 1200V SOT-227

44.89