Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
CEL NE46234-SE-AZ
RF TRANS NPN 12V 6GHZ SOT89
0
ON Semiconductor MCH4020-TL-E
RF TRANS NPN 8V 16GHZ 4MCPH
0
ON Semiconductor FH102A-TR-E
RF TRANS 2 NPN 10V 7GHZ 6MCP
0
ON Semiconductor EC4H09C-TL-H
RF TRANS NPN 3.5V 26GHZ ECSP1008
0
ON Semiconductor EC4H08C-TL-H
RF TRANS NPN 3.5V 24GHZ ECSP1008
0
ON Semiconductor EC3H02BA-TL-H
RF TRANS NPN 10V 7GHZ 3-ECSP1006
0
ON Semiconductor 2SC5501A-4-TR-E
RF TRANS NPN 10V 7GHZ 4MCP
0
ON Semiconductor 2SC5231A-8-TL-E
RF TRANS NPN 10V 7GHZ SMCP
0