Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Microsemi Corporation TAN250A

RF TRANS NPN 60V 1.215GHZ 55AW

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Microsemi Corporation TAN150

RF TRANS NPN 55V 1.215GHZ 55AT

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Microsemi Corporation S200-50

RF TRANS NPN 110V 30MHZ 55HX

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Microsemi Corporation MSC1450M

RF TRANS NPN 65V 1.09GHZ M216

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Microsemi Corporation MSC1400M

RF TRANS NPN 65V 1.15GHZ M216

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Microsemi Corporation MSC1350M

RF TRANS NPN 65V 1.15GHZ M218

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Microsemi Corporation MSC1175M

RF TRANS NPN 65V 1.15GHZ M218

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Microsemi Corporation MS652S

RF TRANS NPN 16V 512MHZ M123

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