Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation MS2587
RF POWER TRANSISTOR
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Microsemi Corporation MS2586
RF POWER TRANSISTOR
0
Microsemi Corporation MS2575A
RF POWER TRANSISTOR
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Microsemi Corporation MS2563
RF POWER TRANSISTOR
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Microsemi Corporation MS2562
RF POWER TRANSISTOR
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Microsemi Corporation MS2554A
RF TRANS NPN 65V 1.15GHZ M216
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Microsemi Corporation MS2506
RF POWER TRANSISTOR
0
Microsemi Corporation MS2502W
RF POWER TRANSISTOR
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