Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFP405H6327XTSA1

RF TRANS NPN 5V 25GHZ SOT343

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Diodes Incorporated BFS17NTA

RF TRANS NPN 11V 3.2GHZ SOT23-3

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Infineon Technologies BFP460H6327XTSA1

RF TRANS NPN 5.8V 22GHZ SOT343-4

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Infineon Technologies BFP420FH6327XTSA1

RF TRANS NPN 5.5V 25GHZ 4TSFP

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Infineon Technologies BFR106E6327HTSA1

RF TRANS NPN 15V 5GHZ SOT23-3

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Infineon Technologies BFR93AWH6327XTSA1

RF TRANS NPN 12V 6GHZ SOT323-3

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Infineon Technologies BFR93AE6327HTSA1

RF TRANS NPN 12V 6GHZ SOT23-3

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Infineon Technologies BFR182E6327HTSA1

RF TRANS NPN 12V 8GHZ SOT23-3

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